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Preliminary
RT8010B
1.5MHz, 800mA, High Efficiency PWM Step-Down DC/DC Converter
General Description
The RT8010B is a high-efficiency Pulse-Width-Modulated (PWM) step-down DC-DC converter. Capable of delivering 800mA output current over a wide input voltage range from 2.5V to 4V, the RT8010B is ideally suited for portable electronic devices that are powered from 1-cell Li-ion battery or from other power sources such as cellular phones, PDAs and hand-held devices. Two operating modes are available including PWM/LowDropout autoswitch and shut-down modes. The internal synchronous rectifier with low RDS(ON) dramatically reduces conduction loss at PWM mode. No external Schottky diode is required in practical application. The RT8010B enters Low-Dropout mode when normal PWM can not provide regulated output voltage by continuously turning on the upper PMOS. The RT8010B enters shut-down mode and consumes less than 0.1A when EN pin is pulled low. The switching ripple is easily smoothed-out by small package filtering elements due to a fixed operating frequency of 1.5MHz. This along with small WDFN-8L 2x2 package provides small PCB area application. Other features include soft start, lower internal reference voltage with 2% accuracy, over temperature protection, and over current protection.
Features
+2.5V to +4V Input Range Output Voltage (Adjustable Output From 0.6V to VIN) 800mA Output Current 95% Efficiency No Schottky Diode Required 1.5MHz Fixed-Frequency PWM Operation Small 8-Lead WDFN Package RoHS Compliant and 100% Lead (Pb)-Free
Applications
Mobile Phones Personal Information Appliances Wireless and DSL Modems MP3 Players Portable Instruments
Pin Configurations
(TOP VIEW)
EN FB VIN LX
1 2 3
4 8
9
7 6
5
PGND PGND PGND AGND
WDFN-8L 2x2
Marking Information
For marking information, contact our sales representative directly or through a Richtek distributor located in your area, otherwise visit our website for detail.
Ordering Information
RT8010B Package Type QW : WDFN-8L 2x2 (W-Type) Operating Temperature Range G : Green (Halogen Free with Commercial Standard)
Note : Richtek Green products are : RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020. Suitable for use in SnPb or Pb-free soldering processes. 100% matte tin (Sn) plating.
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RT8010B
Typical Application Circuit
VIN 2.5V to 4V 3 CIN 4.7uF 1
Preliminary
VIN
LX
4
L 2.2uH VOUT C1 R1 COUT 10uF
RT8010B EN FB
2 IR2 5
R2
VOUT = VREF x 1 + R1 R2
6, 7, 8
PGND AGND
with R2 = 75k to 200k, and (R1 x C1) should be in the range between 3x10-6 and 6x10-6 for component selection.
Functional Pin Description
Pin No. 1 2 3 4 5 6, 7, 8 Pin Name EN FB VIN LX AGND PGND Feedback Pin. Power Input. Pin for Switching. Analog Ground. Power Ground. No Internal Connection. Pin Function Chip Enable (Active High).
Exposed Pad (9) NC
Function Block Diagram
EN VIN
OSC & Shutdown Control Slope Compensation Current Sense
RS1 Current Limit Detector
FB
Error Amplifier RC COMP
PWM Comparator
Control Logic
Driver
LX
RS2 UVLO & Power Good Detector PGND VREF
AGND
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Preliminary Absolute Maximum Ratings
(Note 1)
RT8010B
6.5V -0.3V to VIN 0.606W 165C/W 20C/W 260C -65C to 150C 150C 2kV 200V
Supply Input Voltage -----------------------------------------------------------------------------------------------------EN, FB Pin Voltage ------------------------------------------------------------------------------------------------------Power Dissipation, PD @ TA = 25C WDFN-8L 2x2 -------------------------------------------------------------------------------------------------------------Package Thermal Resistance (Note 4) WDFN-8L 2x2, JA --------------------------------------------------------------------------------------------------------WDFN-8L 2x2, JC -------------------------------------------------------------------------------------------------------Lead Temperature (Soldering, 10 sec.) ------------------------------------------------------------------------------Storage Temperature Range -------------------------------------------------------------------------------------------Junction Temperature ----------------------------------------------------------------------------------------------------ESD Susceptibility (Note 2) HBM (Human Body Mode) ---------------------------------------------------------------------------------------------MM (Machine Mode) ------------------------------------------------------------------------------------------------------
Recommended Operating Conditions
(Note 3)
Supply Input Voltage ------------------------------------------------------------------------------------------------------ 2.5V to 4V Junction Temperature Range -------------------------------------------------------------------------------------------- -40C to 125C Ambient Temperature Range -------------------------------------------------------------------------------------------- -40C to 85C
Electrical Characteristics
(VIN = 3.6V, VOUT = 2.5V, VREF = 0.6V, L = 2.2H, CIN = 4.7F, COUT = 10F, IMAX = 0.8A, TA = 25C, unless otherwise specified)
Parameter Input Voltage Range Quiescent Current Shutdown Current Reference Voltage Adjustable Output Range Output Voltage Adjustable Accuracy FB Input Current P-MOSFET RON N-MOSFET RON P-Channel Current Limit
Symbol VIN IQ ISHDN VREF VOUT VOUT IFB RDS(ON)_P RDS(ON)_N ILIM_P
Test Conditions
Min 2.5
Typ -50 0.1 0.6 ---0.28 0.38 0.25 0.35 1.5 --1.8 0.1
Max 4 70 1 0.612 VIN - 0.2V +3 50 ------0.4 ---
Units V A A V V % nA A V V V V
IOUT = 0mA, VFB = VREF + 5% EN = GND For Adjustable Output Voltage (Note 6) VIN = VOUT + V to 4V 0A < IOUT < 0.8A VFB = VIN IOUT = 200mA IOUT = 200mA VIN = 2.5V to 4V VIN = 2.5V to 4V VIN = 2.5V to 4V VIN = 3.6V VIN = 2.5V VIN = 3.6V VIN = 2.5V (Note 5)
--0.588 VREF
-3
-50 ----1.2 1.5 ----
EN High-Level Input Voltage VEN_H EN Low-Level Input Voltage VEN_L Under Voltage Lock Out UVLO Threshold Hysteresis
To be continued
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RT8010B
Parameter Oscillator Frequency Thermal Shutdown Temperature Max. Duty Cycle LX Leakage Current Symbol fOSC TSD
Preliminary
Test Conditions VIN = 3.6V, IOUT = 100mA Min 1.2 -100 VIN = 3.6V, VLX = 0V or VLX = 3.6V -1 Typ 1.5 160 --Max 1.8 --1 Units MHz C % A
Note 1. Stresses listed as the above "Absolute Maximum Ratings" may cause permanent damage to the device. These are for stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may remain possibility to affect device reliability. Note 2. Devices are ESD sensitive. Handling precaution recommended. Note 3. The device is not guaranteed to function outside its operating conditions. Note 4. JA is measured in the natural convection at TA = 25C on a high effective four layers thermal conductivity test board of JEDEC 51-7 thermal measurement standard. The case point of JC is on the expose pad for the QFN package. Note 5. V = IOUT x PRDS(ON) Note 6. Guarantee by design.
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Preliminary Typical Operating Characteristics
Efficiency vs. Output Current
100 90 80
RT8010B
Efficiency vs. Output Current
100 90 80
VIN = 3.3V VIN = 2.5V
VIN = 3.3V VIN = 2.5V
Efficiency (%)
Efficiency (%)
70 60 50 40 30 20 10 0 0 0.1 0.2 0.3 0.4 0.5 0.6
70 60 50 40 30 20
VOUT = 1.2V, COUT = 4.7F, L = 4.7H
0.7 0.8
10 0 0 0.1 0.2
VOUT = 1.2V, COUT = 10F, L = 2.2H
0.3 0.4 0.5 0.6 0.7 0.8
Output Current (A)
Output Current (A)
EN Pin Threshold vs. Input Voltage
1.20 1.15 1.10
1.6 1.5 1.4
EN Pin Threshold vs. Temperature
EN Pin Threshold (V)
EN Pin Threshold (V)
1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 4.3 4.5
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -40 -25 -10 5
Rising
Rising Falling
Falling
VOUT = 1.2V, IOUT = 0A
VIN = 3.6V, VOUT = 1.2V, IOUT = 0A
20 35 50 65 80 95 110 125
Input Voltage (V)
Temperature (C)
UVLO Threshold vs. Temperature
2.0 1.9
0.612 0.610
VREF vs. Temperature
0.608 0.606 0.604
Rising
UVLO Threshold (V)
1.8
V REF (V)
1.7 1.6 1.5 1.4 1.3 1.2 -40 -25 -10 5 20 35
0.602 0.600 0.598 0.596 0.594 0.592 0.590 0.588 -40 -25 -10 5 20 35 50 65 80 95 110 125
Falling
VOUT = 1.2V, IOUT = 0A
50 65 80 95 110 125
Temperature (C)
Temperature (C)
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RT8010B
Preliminary
Output Voltage vs. Loading Current
1.230 1.225 1.220
Output Voltage vs. Temperature
1.25 1.24 1.23
Output Voltage (V)
Output Voltage (V)
1.215 1.210 1.205 1.200 1.195 1.190 1.185 1.180 0 0.1 0.2 0.3 0.4 0.5 0.6
1.22 1.21 1.20 1.19 1.18 1.17 1.16 1.15 -40 -25 -10 5 20 35 50 65 80 95 110 125
VIN = 3.6V
0.7 0.8
VIN = 3.6V, IOUT = 0A
Loading Current (A)
Temperature (C)
Frequency vs. Input Voltage
1.60 1.55
1.60 1.55
Frequency vs. Temperature
Frequency (MHz)
Frequency (MHz)
VIN = 3.6V, VOUT = 1.2V, IOUT = 300mA
2.5 2.8 3.1 3.4 3.7 4
1.50 1.45 1.40 1.35 1.30 1.25 1.20
1.50 1.45 1.40 1.35 1.30 1.25 1.20 -40 -25 -10
VIN = 3.6V, VOUT = 1.2V, IOUT = 300mA
5 20 35 50 65 80 95 110 125
Input Voltage (V)
Temperature (C)
Output Current Limit vs. Input Voltage
2.4 2.3
Output Current Limit vs. Temperature
2.4 2.3
Output Current limit (A)
2.1 2.0 1.9 1.8 1.7 1.6 1.5 1.4 2.5 2.75 3
Output Current limit (A)
2.2
2.2 2.1 2.0 1.9 1.8 1.7 1.6 1.5 -40 -25 -10 5 20 35 50 65
VIN = 3.6V VIN = 3.3V
VOUT = 1.2V @ TA = 25C
3.25 3.5 3.75 4
VOUT = 1.2V
80 95 110 125
Input Voltage (V)
Temperature (C)
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Preliminary
RT8010B
Power On from EN
VIN = 3.6V, VOUT = 1.2V, IOUT = 1A
Power On from EN
VIN = 3.6V, VOUT = 1.2V, IOUT = 10mA
VEN (2V/Div) VOUT (1V/Div) I IN (500mA/Div) Time (100s/Div)
VEN (2V/Div) VOUT (1V/Div) I IN (500mA/Div) Time (100s/Div)
Load Transient Response
VIN = 3.6V, VOUT = 1.2V IOUT = 50mA to 1A
Load Transient Response
VIN = 3.6V, VOUT = 1.2V IOUT = 50mA to 0.5A
VOUT (50mV/Div)
VOUT (50mV/Div)
IOUT (500mA/Div) Time (50s/Div)
IOUT (500mA/Div)
Time (50s/Div)
Output Ripple Voltage
VIN = 3.6V, VOUT = 1.2V IOUT = 0A
Output Ripple Voltage
VIN = 3.6V, VOUT = 1.2V IOUT = 1A
VOUT (10mV/Div)
VOUT (10mV/Div)
VLX (2V/Div)
VLX (2V/Div)
Time (500ns/Div)
Time (500ns/Div)
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RT8010B
Applications Information
Preliminary
The basic RT8010B application circuit is shown in Typical Application Circuit. External component selection is determined by the maximum load current and begins with the selection of the inductor value and operating frequency followed by CIN and COUT. Inductor Selection For a given input and output voltage, the inductor value and operating frequency determine the ripple current. The ripple current IL increases with higher VIN and decreases with higher inductance.
design current is exceeded. This results in an abrupt increase in inductor ripple current and consequent output voltage ripple. Do not allow the core to saturate! Different core materials and shapes will change the size/ current and price/current relationship of an inductor. Toroid or shielded pot cores in ferrite or permalloy materials are small and do not radiate energy but generally cost more than powdered iron core inductors with similar characteristics. The choice of which style inductor to use mainly depends on the price vs size requirements and any radiated field/EMI requirements. CIN and COUT Selection The input capacitance, C IN, is needed to filter the trapezoidal current at the source of the top MOSFET. To prevent large ripple voltage, a low ESR input capacitor sized for the maximum RMS current should be used. RMS current is given by : IRMS = IOUT(MAX) VOUT VIN VIN -1 VOUT
V V IL = OUT x 1 - OUT VIN f xL
Having a lower ripple current reduces the ESR losses in the output capacitors and the output voltage ripple. Highest efficiency operation is achieved at low frequency with small ripple current. This, however, requires a large inductor. A reasonable starting point for selecting the ripple current is IL = 0.4(IMAX). The largest ripple current occurs at the highest VIN. To guarantee that the ripple current stays below a specified maximum, the inductor value should be chosen according to the following equation :
VOUT VOUT L= x 1 - VIN(MAX) f x IL(MAX)
Inductor Core Selection Once the value for L is known, the type of inductor must be selected. High efficiency converters generally can not afford the core loss found in low cost powdered iron cores, forcing the use of more expensive ferrite or mollypermalloy cores. Actual core loss is independent of core size for a fixed inductor value but it is very dependent on the inductance selected. As the inductance increases, core losses decrease. Unfortunately, increased inductance requires more turns of wire and therefore copper losses will increase. Ferrite designs have very low core losses and are preferred at high switching frequencies, so design goals can concentrate on copper loss reduction and saturation prevention. Ferrite core material saturates "hard", which means that inductance collapses abruptly when the peak
This formula has a maximum at VIN = 2VOUT, where I RMS = I OUT/2. This simple worst-case condition is commonly used for design because even significant deviations do not offer much relief or choose a capacitor rated at a higher temperature than required. Several capacitors may also be paralleled to meet size or height requirements in the design. The selection of COUT is determined by the effective series resistance (ESR) that is required to minimize voltage ripple and load step transients, as well as the amount of bulk capacitance that is necessary to ensure that the control loop is stable. Loop stability can be checked by viewing the load transient response as described in a later section. The output ripple, VOUT, is determined by :
1 VOUT IL ESR + 8fCOUT
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Preliminary
The output ripple is the highest at maximum input voltage since IL increases with input voltage. Multiple capacitors placed in parallel may be needed to meet the ESR and RMS current handling requirements. Dry tantalum, special polymer, aluminum electrolytic and ceramic capacitors are all available in surface mount packages. Special polymer capacitors offer very low ESR but have lower capacitance density than other types. Tantalum capacitors have the highest capacitance density but it is important to only use types that have been surge tested for use in switching power supplies. Aluminum electrolytic capacitors have significantly higher ESR but can be used in cost-sensitive applications provided that consideration is given to ripple current ratings and long term reliability. Ceramic capacitors have excellent low ESR characteristics but can have a high voltage coefficient and audible piezoelectric effects. The high Q of ceramic capacitors with trace inductance can also lead to significant ringing. Using Ceramic Input and Output Capacitors Higher values, lower cost ceramic capacitors are now becoming available in smaller case sizes. Their high ripple current, high voltage rating and low ESR make them ideal for switching regulator applications. However, care must be taken when these capacitors are used at the input and output. When a ceramic capacitor is used at the input and the power is supplied by a wall adapter through long wires, a load step at the output can induce ringing at the input, VIN. At best, this ringing can couple to the output and be mistaken as loop instability. At worst, a sudden inrush of current through the long wires can potentially cause a voltage spike at VIN large enough to damage the part. Output Voltage Programming The resistive divider allows the FB pin to sense a fraction of the output voltage as shown in Figure 4.
V OUT R1 FB RT8010B GND R2
RT8010B
For adjustable voltage mode, the output voltage is set by an external resistive divider according to the following equation : VOUT = VREF (1 + R1) R2 where VREF is the internal reference voltage (0.6V typ.) Efficiency Considerations The efficiency of a switching regulator is equal to the output power divided by the input power times 100%. It is often useful to analyze individual losses to determine what is limiting the efficiency and which change would produce the most improvement. Efficiency can be expressed as : Efficiency = 100% - (L1+ L2+ L3+ ...) where L1, L2, etc. are the individual losses as a percentage of input power. Although all dissipative elements in the circuit produce losses, two main sources usually account for most of the losses : VIN quiescent current and I2R losses. The VIN quiescent current loss dominates the efficiency loss at very low load currents whereas the I2R loss dominates the efficiency loss at medium to high load currents. In a typical efficiency plot, the efficiency curve at very low load currents can be misleading since the actual power lost is of no consequence. 1. The VIN quiescent current appears due to two factors including : the DC bias current as given in the electrical characteristics and the internal main switch and synchronous switch gate charge currents. The gate charge current results from switching the gate capacitance of the internal power MOSFET switches. Each time the gate is switched from high to low to high again, a packet of charge Q moves from VIN to ground. The resulting Q/t is the current out of VIN that is typically larger than the DC bias current. In continuous mode, IGATECHG = f(QT+QB) where QT and QB are the gate charges of the internal top and bottom switches. Both the DC bias and gate charge losses are proportional to VIN and thus their effects will be more pronounced at higher supply voltages. 2. I2R losses are calculated from the resistances of the internal switches, RSW and external inductor RL.
Figure 4. Setting the Output Voltage
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RT8010B
Preliminary
For RT8010B packages, the Figure 5 of derating curves allows the designer to see the effect of rising ambient temperature on the maximum power allowed.
0.8
Maximum Power Dissipation (W)
In continuous mode, the average output current flowing through inductor L is "chopped" between the main switch and the synchronous switch. Thus, the series resistance looking into the LX pin is a function of both top and bottom MOSFET RDS(ON) and the duty cycle (DC) as follows : RSW = RDS(ON)TOP x DC + RDS(ON)BOT x (1-DC) The RDS(ON) for both the top and bottom MOSFETs can be obtained from the Typical Performance Characteristics curves. Thus, to obtain I2R losses, simply add RSW to RL and multiply the result by the square of the average output current. Other losses including CIN and COUT ESR dissipative losses and inductor core losses generally account for less than 2% of the total loss. Thermal Considerations For continuous operation, do not exceed the maximum operation junction temperature 125C. The maximum power dissipation depends on the thermal resistance of IC package, PCB layout, the rate of surroundings airflow and temperature difference between junction to ambient. The maximum power dissipation can be calculated by following formula : PD(MAX) = ( TJ(MAX) - TA ) / JA Where T J(MAX) is the maximum operation junction temperature 125C, TA is the ambient temperature and the JA is the junction to ambient thermal resistance. For recommended operating conditions specification of RT8010B, where T J(MAX) is the maximum junction temperature of the die (125C) and TA is the maximum ambient temperature. The junction to ambient thermal resistance JA is layout dependent. For WDFN-8L 2x2 packages, the thermal resistance JA is 165C/W on the standard JEDEC 51-7 four layers thermal test board. The maximum power dissipation at TA = 25C can be calculated by following formula : PD(MAX) = ( 125C - 25C ) / (165C/W) = 0.606W for WDFN-8L 2x2 packages The maximum power dissipation depends on operating ambient temperature for fixed T J(MAX) and thermal resistance JA.
Four Layers PCB
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125
WDFN-8L 2x2
Ambient Temperature (C)
Figure 5. Derating Curves for RT8010B Package Checking Transient Response The regulator loop response can be checked by looking at the load transient response. Switching regulators take several cycles to respond to a step in load current. When a load step occurs, VOUT immediately shifts by an amount equal to ILOAD (ESR), where ESR is the effective series resistance of COUT. ILOAD also begins to charge or discharge COUT generating a feedback error signal used by the regulator to return VOUT to its steady-state value. During this recovery time, VOUT can be monitored for overshoot or ringing that would indicate a stability problem. Layout Considerations Follow the PCB layout guidelines for optimal performance of RT8010B. Put the input capacitor as close as possible to the device pins (VIN and GND). LX node is with high frequency voltage swing and should be kept small area. Keep analog components away from LX node to prevent stray capacitive noise pick-up. Connect feedback network behind the output capacitors. Keep the loop area small. Place the feedback components near the RT8010B. Connect all analog grounds to a command node and then connect the command node to the power ground behind the output capacitors.
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Preliminary
The feedback resistor divider must be placed as close to the FB pin as possible. GND VOUT CIN Put CIN between VIN and GND and it should be closed to the IC. VOUT COUT The LX pin should be connected to Inductor by wide and short trace, keep sensitive components away from this trace Figure 6 Output capacitor must be closed to the IC. R1 CF
RT8010B
R2 EN FB VIN LX L1 1 2 3 4 8 PGND 7 PGND 6 PGND 5 AGND
Table 1. Recommended Inductors
Supplier TAIYO YUDEN GOTREND Sumida Sumida TAIYO YUDEN GOTREND Inductance Current Rating (mA) (uH) 2.2 2.2 2.2 4.7 4.7 4.7 1480 1500 1500 1000 1020 1100 DCR (m) 60 58 75 135 120 146 Dimensions (mm) 3.00 x 3.00 x 1.50 3.85 x 3.85 x 1.80 4.50 x 3.20 x 1.55 4.50 x 3.20 x 1.55 3.00 x 3.00 x 1.50 3.85 x 3.85 x 1.80 Series NR 3015 GTSD32 CDRH2D14 CDRH2D14 NR 3015 GTSD32
Table 2. Recommended Capacitors for CIN and COUT
Supplier TDK MURATA TAIYO YUDEN TAIYO YUDEN TDK MURATA MURATA TAIYO YUDEN Capacitance (uF) 4.7 4.7 4.7 10 10 10 10 10 Package 603 603 603 603 805 805 805 805 Part Number C1608JB0J475M GRM188R60J475KE19 JMK107BJ475RA JMK107BJ106MA C2012JB0J106M GRM219R60J106ME19 GRM219R60J106KE19 JMK212BJ106RD
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RT8010B
Outline Dimension
Preliminary
D
D2
L
E
E2 SEE DETAIL A
1
e A A1 A3
b
2
1
2
1
DETAIL A Pin #1 ID and Tie Bar Mark Options Note : The configuration of the Pin #1 identifier is optional, but must be located within the zone indicated.
Symbol A A1 A3 b D D2 E E2 e L
Dimensions In Millimeters Min 0.700 0.000 0.175 0.200 1.950 1.000 1.950 0.400 0.500 0.300 0.400 Max 0.800 0.050 0.250 0.300 2.050 1.250 2.050 0.650
Dimensions In Inches Min 0.028 0.000 0.007 0.008 0.077 0.039 0.077 0.016 0.020 0.012 0.016 Max 0.031 0.002 0.010 0.012 0.081 0.049 0.081 0.026
W-Type 8L DFN 2x2 Package
Richtek Technology Corporation
Headquarter 5F, No. 20, Taiyuen Street, Chupei City Hsinchu, Taiwan, R.O.C. Tel: (8863)5526789 Fax: (8863)5526611
Richtek Technology Corporation
Taipei Office (Marketing) 8F, No. 137, Lane 235, Paochiao Road, Hsintien City Taipei County, Taiwan, R.O.C. Tel: (8862)89191466 Fax: (8862)89191465 Email: marketing@richtek.com
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